Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells
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چکیده
منابع مشابه
Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells
Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of t...
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Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2020
ISSN: 0003-6951,1077-3118
DOI: 10.1063/5.0023545